Crystallization kinetics of sputter-deposited amorphous AgInSbTe films
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Abstract
AgInSbTe films have recently attracted considerable interest as advanced materials for phase change recording. For this application the determination of crystallization kinetics is of crucial importance. In this work the temperature dependence of structural and electrical properties of sputtered AgInSbTe films has been determined. Temperature dependent measurements of the electrical resistance have been employed to study the kinetics of structural changes of these films. Upon annealing a major resistivity drop is observed at around 160°C which can be attributed to a structural change as corroborated by x-ray diffraction. X-ray diffraction shows an amorphous phase for as-deposited films, while crystalline films with hexagonal structure (a=4283 Å, c=16995 Å) are obtained upon annealing above 160°C. By applying Kissingers method, an activation energy of 3.03±0.17 eV is obtained for the crystallization. X-ray reflection measurements reveal a density increase of 5.2%±0.2% and a thickness decrease of 5.5%±0.2% upon crystallization. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Crystallization kinetics of sputter-deposited amorphous AgInSbTe films</title><author><name sortKey="Njoroge, Walter K" uniqKey="Njoroge W">Walter K. Njoroge</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen, Germany</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen</wicri:regionArea><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Kenyatta University, P.O. Box 43844 Nairobi, Kenya</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">Kenya</country><wicri:regionArea>Department of Physics, Kenyatta University, P.O. Box 43844 Nairobi</wicri:regionArea><wicri:noRegion>P.O. Box 43844 Nairobi</wicri:noRegion></affiliation></author><author><name sortKey="Wuttig, Matthias" uniqKey="Wuttig M">Matthias Wuttig</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen, Germany</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen</wicri:regionArea><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>ISG3, Forschungszentrum Julich, D-52428 Julich, Germany</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>ISG3, Forschungszentrum Julich, D-52428 Julich</wicri:regionArea><wicri:noRegion>52428 Julich</wicri:noRegion><wicri:noRegion>D-52428 Julich</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0406313</idno><date when="2001-10-15">2001-10-15</date><idno type="stanalyst">PASCAL 01-0406313 AIP</idno><idno type="RBID">Pascal:01-0406313</idno><idno type="wicri:Area/Main/Corpus">010823</idno><idno type="wicri:Area/Main/Repository">00FD17</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous state</term><term>Annealing</term><term>Antimony alloys</term><term>Crystallization</term><term>Density</term><term>Electrical resistivity</term><term>Experimental study</term><term>Indium alloys</term><term>Metallic thin films</term><term>Silver alloys</term><term>Sputtered coatings</term><term>Tellurium alloys</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6143D</term><term>8105B</term><term>6855</term><term>7361A</term><term>6172C</term><term>8140G</term><term>8140R</term><term>Etude expérimentale</term><term>Argent alliage</term><term>Indium alliage</term><term>Antimoine alliage</term><term>Tellure alliage</term><term>Cristallisation</term><term>Etat amorphe</term><term>Revêtement pulvérisation</term><term>Couche mince métallique</term><term>Recuit</term><term>Diffraction RX</term><term>Densité</term><term>Résistivité électrique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">AgInSbTe films have recently attracted considerable interest as advanced materials for phase change recording. For this application the determination of crystallization kinetics is of crucial importance. In this work the temperature dependence of structural and electrical properties of sputtered AgInSbTe films has been determined. Temperature dependent measurements of the electrical resistance have been employed to study the kinetics of structural changes of these films. Upon annealing a major resistivity drop is observed at around 160°C which can be attributed to a structural change as corroborated by x-ray diffraction. X-ray diffraction shows an amorphous phase for as-deposited films, while crystalline films with hexagonal structure (a=4283 Å, c=16995 Å) are obtained upon annealing above 160°C. By applying Kissingers method, an activation energy of 3.03±0.17 eV is obtained for the crystallization. X-ray reflection measurements reveal a density increase of 5.2%±0.2% and a thickness decrease of 5.5%±0.2% upon crystallization. © 2001 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>90</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Crystallization kinetics of sputter-deposited amorphous AgInSbTe films</s1></fA08><fA11 i1="01" i2="1"><s1>NJOROGE (Walter K.)</s1></fA11><fA11 i1="02" i2="1"><s1>WUTTIG (Matthias)</s1></fA11><fA14 i1="01"><s1>I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen, Germany</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Kenyatta University, P.O. Box 43844 Nairobi, Kenya</s1><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen, Germany</s1><sZ>2 aut.</sZ></fA14><fA14 i1="04"><s1>ISG3, Forschungszentrum Julich, D-52428 Julich, Germany</s1><sZ>2 aut.</sZ></fA14><fA20><s1>3816-3821</s1></fA20><fA21><s1>2001-10-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0406313</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>AgInSbTe films have recently attracted considerable interest as advanced materials for phase change recording. For this application the determination of crystallization kinetics is of crucial importance. In this work the temperature dependence of structural and electrical properties of sputtered AgInSbTe films has been determined. Temperature dependent measurements of the electrical resistance have been employed to study the kinetics of structural changes of these films. Upon annealing a major resistivity drop is observed at around 160°C which can be attributed to a structural change as corroborated by x-ray diffraction. X-ray diffraction shows an amorphous phase for as-deposited films, while crystalline films with hexagonal structure (a=4283 Å, c=16995 Å) are obtained upon annealing above 160°C. By applying Kissingers method, an activation energy of 3.03±0.17 eV is obtained for the crystallization. X-ray reflection measurements reveal a density increase of 5.2%±0.2% and a thickness decrease of 5.5%±0.2% upon crystallization. © 2001 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B60A43D</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A05B</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H55</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C61A</s0></fC02><fC02 i1="05" i2="3"><s0>001B60A72C</s0></fC02><fC02 i1="06" i2="3"><s0>001B80A40G</s0></fC02><fC02 i1="07" i2="3"><s0>001B80A40R</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6143D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8105B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6855</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7361A</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>6172C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>8140G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>8140R</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Argent alliage</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Silver alloys</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium alliage</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium alloys</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Antimoine alliage</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Antimony alloys</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Tellure alliage</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Tellurium alloys</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Cristallisation</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Crystallization</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Etat amorphe</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Amorphous state</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Revêtement pulvérisation</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Sputtered coatings</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Couche mince métallique</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Metallic thin films</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Recuit</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Annealing</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Diffraction RX</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>XRD</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Densité</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Density</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Résistivité électrique</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Electrical resistivity</s0></fC03><fN21><s1>281</s1></fN21><fN47 i1="01" i2="1"><s0>0140M000432</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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